ANALYSIS OF A RESONANT-CAVITY ENHANCED GAAS/ALGAAS MSM PHOTODETECTOR

被引:18
作者
LI, ZM
LANDHEER, D
VEILLEUX, M
CONN, DR
SURRIDGE, R
XU, JM
MCDONALD, RI
机构
[1] TRLABS,EDMONTON T6J 5Y7,ALBERTA,CANADA
[2] MCMASTER UNIV,COMMUN RES LAB,HAMILTON L8S 4L7,ONTARIO,CANADA
[3] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
[4] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A4,ONTARIO,CANADA
关键词
D O I
10.1109/68.136491
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a new two-dimensional device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. We have incorporated a model of multi-layer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). We show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained. Theoretically, the maximum external quantum efficiency in this structure can be as high as 99% (without the shadowing effects) for a 0.5-mu-m thick absorbing layer at 829 nm representing a greater than three-fold enhancement over structures with the same absorption and buffer layer but with no buried DBR. Experimental results obtained on diodes with a buffer layer but no buried DBR have been compared to a two-dimensional simulation with an external circuit modeled using SPICE. For devices with 1.0-mu-m fingers and 1.5-mu-m spaces speeds can be increased by at least a factor of two over diodes with no buried buffer layer.
引用
收藏
页码:473 / 476
页数:4
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