RADIATION EFFECTS ON SOLID-STATE IMAGING DEVICES

被引:17
作者
HOPKINSON, GR
机构
[1] Sira Ltd., South Hill, Chislehurst, Kent BR7 5EH, United Kingdom
关键词
D O I
10.1016/0969-806X(94)90203-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Radiation effects on semiconductor imaging arrays are reviewed, with special emphasis on the performance of silicon CCDs in space-though other environments and detector materials are also considered. The basic phenomena of permanent ionization damage, bulk displacement damage and transient charge production are examined as well as methods for predicting mission performance from ground test data. Approaches for device hardening are also discussed.
引用
收藏
页码:79 / 91
页数:13
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