COULOMB-BLOCKADE IN SILICON-BASED STRUCTURES AT TEMPERATURES UP TO 50-K

被引：34

作者：

PAUL, DJ ^{[1
]}

CLEAVER, JRA ^{[1
]}

AHMED, H ^{[1
]}

WHALL, TE ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium delta-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

引用

页码：631 / 632

页数：2

共 10 条

[1]

Averin D. V., 1991, MESOSCOPIC PHENOMENA, P169

[2]

DEVORET MH, 1992, SINGLE CHARGE TUNNEL, P1

[3] SIDE GATING IN DELTA-DOPED QUANTUM WIRES [J].

FENG, Y ;

THORNTON, TJ ;

HARRIS, JJ ;

WILLIAMS, D .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :94-96

[4] OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].

FULTON, TA ;

DOLAN, GJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (01) :109-112

[5] HIGH ELECTRON-MOBILITY IN MODULATION-DOPED SI/SIGE [J].

ISMAIL, K ;

MEYERSON, BS ;

WANG, PJ .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2117-2119

[6]

KASPER E, 1991, SEMICONDUCT SEMIMET, V33, P223

[7] SINGLE-ELECTRON EFFECTS IN A POINT CONTACT USING SIDE-GATING IN DELTA-DOPED LAYERS [J].

NAKAZATO, K ;

THORNTON, TJ ;

WHITE, J ;

AHMED, H .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3145-3147

[8] SINGLE-ELECTRON MEMORY [J].

NAKAZATO, K ;

BLAIKIE, RJ ;

CLEAVER, JRA ;

AHMED, H .

ELECTRONICS LETTERS, 1993, 29 (04) :384-385

[9] FABRICATION OF WIRES IN SILICON-GERMANIUM MATERIAL [J].

PAUL, DJ ;

CLEAVER, JRA ;

AHMED, H .

MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) :349-352

[10] COULOMB STAIRCASE IN A SI/GE STRUCTURE [J].

YAKIMOV, AI ;

MARKOV, VA ;

DVURECHENSKII, AV ;

PCHELYAKOV, OP .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (04) :701-705

← 1 →