SOME RECENT STUDIES ON METAL POLYANILINE SCHOTTKY DEVICES

被引:57
作者
PANDEY, SS
MISRA, SCK
MALHOTRA, BD
CHANDRA, S
机构
[1] National Physical Laboratory, New Delhi, 110 012, Dr. K. S. Krishnan Road
关键词
D O I
10.1002/app.1992.070440519
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
An attempt has been made to estimate various electronic parameters such as work function, barrier height, and ideality factor through I-V measurements carried out on metal/polyaniline Schottky junctions. The results of optical studies conducted on chemically synthesized polyaniline used in the fabrication of such Schottky devices have been presented.
引用
收藏
页码:911 / 915
页数:5
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