TEMPERATURE RESPONSE OF SILICON SURFACE BARRIER SEMICONDUCTOR DETECTORS OPERATED IN DC-SHORT CIRCUIT CONFIGURATION

被引：8

作者：

KLEVENHAGEN, SC ^{[1
]}

机构：

[1] LONDON HOSP, PHYS DEPT, LONDON E1 1BB, ENGLAND

来源：

ACTA RADIOLOGICA-THERAPY PHYSICS BIOLOGY | 1973年 / 12卷 / 02期

关键词：

D O I：

10.3109/02841867309130388

中图分类号：

R8 [特种医学]; R445 [影像诊断学];

学科分类号：

1002 ; 100207 ; 1009 ;

摘要：

引用

页码：124 / 144

页数：21

共 19 条

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[2] ALLSWORTH FL, PERSONAL COMMUNICATI
[3] [Anonymous], 1968, SEMICONDUCTOR DETECT
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CZAJA, W
[J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 10 (03): : 237 - 239
[5] BALDINGER E, 1972, P S NUCLEAR INSTRUME, P98
[6] EFFECTIVE CHARGE CARRIER LIFETIME IN SILICON P-I-N JUNCTION DETECTORS
COLEMAN, JA
SWARTZENDRUBER, LJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) : 240 - +
[7] DEARNALEY G, 1966, SEMICONDUCTOR COUNTE
[8] GULBRANDSEN T, 1962, ACTA RADIOL, V58, P226
[9] APPLICATION OF SOME DIRECT CURRENT PROPERTIES OF SILICON JUNCTION DETECTORS TO GAMMA-RAY DOSIMETRY
JONES, AR
[J]. PHYSICS IN MEDICINE AND BIOLOGY, 1963, 8 (1-4) : 451 - &
[10] REVERSE CURRENT OF HIGH-RESISTIVITY SILICON SURFACE-BARRIER COUNTERS
LANGMANN, HJ
MEYER, O
[J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 44 (01): : 55 - &