POSITRON LIFETIME SPECTROSCOPY OF N-TYPE AND P-TYPE POROUS SILICON

被引:6
作者
DANNEFAER, S [1 ]
BRETAGNON, T [1 ]
FOUCARAN, A [1 ]
TALIERCIO, T [1 ]
KERR, D [1 ]
机构
[1] UNIV MONTPELLIER 2,GES,CNRS,F-34095 MONTPELLIER 05,FRANCE
关键词
POSITRON SPECTROSCOPY; SEMICONDUCTORS; SILICON;
D O I
10.1016/0040-6090(94)05647-V
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Positron lifetime spectroscopy was used to investigate similar to 150 mu m thick porous layers. Very significant positronium formation in the porous layer was found, amounting to similar to 20% of all positrons. The positronium lifetime is exceptionally high (40-55 ns) which indicates that the positronium interacts weakly with the pore surfaces. Aging of porous silicon can remove completely the positronium response.
引用
收藏
页码:171 / 173
页数:3
相关论文
共 10 条
[1]  
Bretagnon T., 1992, Materials Science Forum, V105-110, P1841, DOI 10.4028/www.scientific.net/MSF.105-110.1841
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   VACANCY-TYPE DEFECTS IN CRYSTALLINE AND AMORPHOUS SIO2 [J].
DANNEFAER, S ;
BRETAGNON, T ;
KERR, D .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :884-890
[4]  
DANNEFAER S, 1990, DEFECT CONTROL SEMIC, P1561
[5]   A QUANTITATIVE STUDY OF IMPURITIES IN PHOTOLUMINESCENT AND NONPHOTOLUMINESCENT POROUS SILICON LAYERS [J].
GROSMAN, A ;
ORTEGA, C ;
SIEJKA, J ;
CHAMARRO, M .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) :1992-1996
[6]  
HAUTOJARVI P, 1979, TOPICS CURRENT PHYSI, V12
[7]   POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS [J].
HERINO, R ;
BOMCHIL, G ;
BARLA, K ;
BERTRAND, C ;
GINOUX, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :1994-2000
[8]  
ITOH Y, 1993, APPL PHYS LETT, V63, P2768
[9]  
KIRKEGAARD P, 1980, M2740 RIS NAT LAB RI
[10]   ELECTROPOLISHING SILICON IN HYDROFLUORIC ACID SOLUTIONS [J].
TURNER, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (07) :402-408