YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：54

作者：

UWAI, K

NAKAGOME, H

TAKAHEI, K

机构：

来源：

关键词：

D O I：

10.1063/1.98260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：977 / 979

页数：3

共 9 条

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[J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7767 - 7771
[2] DMITRIEV AG, 1983, SOV PHYS SEMICOND+, V17, P1201
[3] EAVES L, 1982, SEMIINSULATING 3 5 M, P199
[4] Ennen H., 1985, Thirteenth International Conference on Defects in Semiconductors, P115
[5] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
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[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[6] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
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AXMANN, A
EISELE, K
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SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
[7] KASATKIN VA, 1979, SOV PHYS SEMICOND, V12, P974
[8] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP
POMRENKE, GS
ENNEN, H
HAYDL, W
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 601 - 610
[9] EFFECTS OF GROWTH TEMPERATURE AND [PH3] [IN(C2H5)3] ON PURITY OF EPITAXIAL INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
MIKAMI, O
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[J]. ELECTRONICS LETTERS, 1985, 21 (04) : 131 - 132