A METHOD FOR DOPING FLUCTUATIONS MEASUREMENT IN HIGH-RESISTIVITY SILICON

被引：13

作者：

CASTOLDI, A

CHINNICI, S

GATTI, E

LONGONI, A

SAMPIETRO, M

VACCHI, A

REHAK, P

机构：

[1] POLITECN MILAN,DIPARTIMENTO ELECTR,I-20133 MILAN,ITALY

[2] CNR,CTR ELECTR QUANTIST & STRUMENTAZ ELETTR,I-20133 MILAN,ITALY

[3] BROOKHAVEN NATL LAB,UPTON,NY 11973

[4] ROCKEFELLER UNIV,NEW YORK,NY 10021

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.351389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents a method for the measurement of doping fluctuations in high resistivity silicon wafers. Spatial fluctuations of doping are derived from the knowledge of the electrostatic potential in a completely depleted semiconductor bulk. The potential variations are indirectly measured through the analysis of the trajectories of majority carriers drifting within the depleted semiconductor material. Regions of semiconductors up to the full wafer can be investigated. An example of mapping along parallel lines of a floating zone 2 K-OMEGA-cm silicon wafer over an area of 0.4 X 0.8 cm2 is presented. The relative sensitivity of the method is better than 1%.

引用

收藏

页码：3593 / 3599

页数：7

相关论文

共 11 条

[1] SEMICONDUCTOR DRIFT CHAMBER - AN APPLICATION OF A NOVEL CHARGE TRANSPORT SCHEME [J].

GATTI, E ;

REHAK, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 225 (03) :608-614

[2] DYNAMICS OF ELECTRONS IN DRIFT DETECTORS [J].

GATTI, E ;

LONGONI, A ;

REHAK, P ;

SAMPIETRO, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03) :393-399

[3] SILICON DRIFT CHAMBERS - 1ST RESULTS AND OPTIMUM PROCESSING OF SIGNALS [J].

GATTI, E ;

REHAK, P ;

WALTON, JT .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (01) :129-141

[4] SILICON DRIFT CHAMBER PROTOTYPE-STAR FOR THE UPGRADE OF THE UA6 EXPERIMENT AT THE CERN PPBAR COLLIDER [J].

GATTI, E ;

LONGONI, A ;

SAMPIETRO, M ;

GIACOMELLI, P ;

VACCHI, A ;

REHAK, P ;

KEMMER, J ;

HOLL, P ;

STRUDER, L ;

KUBISCHTA, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 273 (2-3) :865-868

[5]

KEMMER J, 1984, NUCL INSTRUM METH A, V226, P89, DOI 10.1016/0168-9002(84)90173-6

[6] INSTABILITY OF THE BEHAVIOR OF HIGH-RESISTIVITY SILICON DETECTORS DUE TO THE PRESENCE OF OXIDE CHARGES [J].

LONGONI, A ;

SAMPIETRO, M ;

STRUDER, L .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 288 (01) :35-43

[7] SEMICONDUCTOR DRIFT CHAMBERS FOR POSITION AND ENERGY MEASUREMENTS [J].

REHAK, P ;

GATTI, E ;

LONGONI, A ;

KEMMER, J ;

HOLL, P ;

KLANNER, R ;

LUTZ, G ;

WYLIE, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1985, 235 (02) :224-234

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[9] PERFORMANCE OF THE UA6 LARGE-AREA SILICON DRIFT CHAMBER PROTOTYPE [J].

VACCHI, A ;

CASTOLDI, A ;

CHINNICI, S ;

GATTI, E ;

LONGONI, A ;

PALMA, F ;

SAMPIETRO, M ;

REHAK, P ;

KEMMER, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 306 (1-2) :187-193

[10] THE PRODUCTION AND AVAILABILITY OF HIGH-RESISTIVITY SILICON FOR DETECTOR APPLICATION [J].

VONAMMON, W ;

HERZER, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (01) :94-102