CHEMICAL-VAPOR-DEPOSITION OF DIAMOND

被引:54
作者
KLAGES, CP
机构
[1] Fraunhofer-Institut für Schicht- und Oberflächentechnik, Hamburg 54, W-2000
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 56卷 / 06期
关键词
D O I
10.1007/BF00331401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the recent decade a multitude of diamond thin film production methods has been developed, generally based on chemical vapor deposition processes from thermally or plasma activated gas phases. Diagnostic studies, growth experiments and numerical kinetic investigations have in recent years lead to an improved understanding of the prerequisites of continuous diamond growth and of the chemical processes involved. While the mechanism of carbon incorporation into the diamond surface is not yet known completely, the gas-phase species which are essential in a diamond-growth atmosphere can be narrowed to a small number, whose role in the gas-phase chemistry is quite well known.
引用
收藏
页码:513 / 526
页数:14
相关论文
共 98 条
[1]  
Angus J., 1989, MRS BULL, V14, P38, DOI [10.1557/S0883769400061480, DOI 10.1557/S0883769400061480]
[2]  
ANGUS JC, 1989, DIAMOND DIAMONDLIKE, P1
[3]   TOWARDS A GENERAL CONCEPT OF DIAMOND CHEMICAL VAPOR-DEPOSITION [J].
BACHMANN, PK ;
LEERS, D ;
LYDTIN, H .
DIAMOND AND RELATED MATERIALS, 1991, 1 (01) :1-12
[4]  
BACHMANN PK, 1990, 1ST EUR C DIAM DIAM
[5]  
BACHMANN PK, 1992, DIAMOND FILMS 92 HEI
[6]  
BACHMANN PK, 1991, DIAMOND DIAMOND LIKE, P829
[7]   CLARIFICATION OF THE EFFECT OF BIAS IN THE HOT FILAMENT PROCESS [J].
BANHOLZER, W ;
KEHL, R .
SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3) :51-58
[8]   Accommodation coefficient of hydrogen, a sensitive detector of surface films [J].
Blodgett, KB ;
Langmuir, I .
PHYSICAL REVIEW, 1932, 40 (01) :78-104
[9]   KINETIC CALCULATIONS IN PLASMAS USED FOR DIAMOND DEPOSITION [J].
BOU, P ;
BOETTNER, JC ;
VANDENBULCKE, L .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A) :1505-1513
[10]  
BUTLER JE, 1989, 1ST P INT C DIAM DIA, P317