ANOMALOUS MAGNETOCONDUCTANCE IN SILICON SURFACES

被引：22

作者：

TANSAL, S

FOWLER, AB

COTELLESSA, RF

机构：

[1] IBM Watson Research Center, Yorktown Heights

[2] New York University, New York, NY

来源：

PHYSICAL REVIEW | 1969年 / 178卷 / 03期

关键词：

D O I：

10.1103/PhysRev.178.1326

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of a tangential magnetic field on the surface transport properties of silicon has been studied at low temperatures. An anomalous variation in conductance, with δGG0>1 and negative magnetoresistance, has been observed in samples with bulk resistivities in excess of 100 Ω cm. © 1969 The American Physical Society.

引用

页码：1326 / +

页数：1

共 9 条

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