ORIGIN OF THE LOW-TEMPERATURE DRIFT MOBILITY INCREASE IN A-SI-H

被引：11

作者：

KEMP, M

SILVER, M

机构：

[1] Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 02期

关键词：

D O I：

10.1080/13642819108205948

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low-temperature rise in drift mobility in a-Si:H is interpreted in terms of a hopping model. The model predicts a critical temperature above which the transport level is pinned at the conduction band edge giving an activated behaviour of the drift mobility and below which the transport level falls in the gap leading to non-dispersive transport. It also predicts the rise of the drift mobility below the critical temperature when the transport level falls faster than k(b)T.

引用

页码：437 / 442

页数：6

共 9 条

[1] LOW-TEMPERATURE ELECTRON-TRANSPORT NEAR THE MOBILITY EDGE OF AMORPHOUS-SILICON [J].

CLOUDE, C ;

SPEAR, WE ;

LECOMBER, PG ;

HOURD, AC .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04) :L113-L118

[2] HOPPING IN EXPONENTIAL BAND TAILS [J].

MONROE, D .

PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149

[3] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].

ORENSTEIN, J ;

KASTNER, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424

[4] DISPERSIVE HOPPING TRANSPORT FROM AN EXPONENTIAL ENERGY-DISTRIBUTION OF SITES [J].

SILVER, M ;

SCHOENHERR, G ;

BAESSLER, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (05) :352-355

[5] MONTE-CARLO SIMULATION OF ANOMALOUS TRANSIT-TIME DISPERSION OF AMORPHOUS SOLIDS [J].

SILVER, M ;

COHEN, L .

PHYSICAL REVIEW B, 1977, 15 (06) :3276-3278

[6] VALIDITY OF THE THERMALIZATION APPROXIMATION IN AMORPHOUS-SEMICONDUCTORS [J].

SILVER, M ;

SNOW, E ;

ADLER, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :455-458

[7] COMMENTS ON ELECTRON AND HOLE TRANSPORT IN THE BAND TAIL STATES OF AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

SILVER, M ;

SPEAR, WE .

AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :315-320

[8] ELECTRON AND HOLE TRANSPORT IN THE BAND-TAIL STATES OF AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

SPEAR, WE ;

CLOUDE, CS .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 58 (05) :467-484

[9]

TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

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