THE CORRELATION BETWEEN CHARGE-DENSITIES AND INTERSTITIAL IMPURITIES IN ALP AND ALAS

被引：6

作者：

AOURAG, H

BELAIDI, A

KHELIFA, B

GAMOUDI, M

JARDIN, C

机构：

[1] UNIV SIDI BELABBES,INST ELECTR,SIDI BELABBES 22000,ALGERIA

[2] ENSET,ORAN 31000,ALGERIA

[3] UNIV LYON 1,ELECTR SOLIDES LAB,F-69622 VILLEURBANNE,FRANCE

[4] UNIV LYON 1,MINERAL CRISTALLOG LAB,F-69622 VILLEURBANNE,FRANCE

来源：

PHYSICS LETTERS A | 1990年 / 149卷 / 5-6期

关键词：

D O I：

10.1016/0375-9601(90)90436-R

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The empirical pseudopotential method is used to compute electronic charge densities at Γ and X k-points of the valence and conduction band-edges in AlP and AlAs. The charge densities are used to predict the effect of interstitial impurities in the modification of their band structures. © 1990.

引用

页码：305 / 310

页数：6

共 3 条

[1] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].