LIFETIMES OF BOUND EXCITONS IN INP

被引：16

作者：

HEIM, U

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 48卷 / 02期

关键词：

D O I：

10.1002/pssb.2220480220

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：629 / &

共 19 条

[1] [Anonymous], [No title captured]
[2] BIMBERG D, 1971, THESIS FRANKFURT
[3] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[4] CARDONA M, 1967, SEMICONDUCTORS SEMIM, V3
[5] CYCLOTRON RESONANCE WITH EPITAXIAL FILMS OF TYPE INP
CHAMBERL.JM
SIMMONDS, PE
STRADLIN.RA
BRADLEY, CC
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02): : L38 - &
[6] GROUND STATE ENERGY OF FREE EXCITONS IN GROUP-IV AND GROUP-III-V SEMICONDUCTORS
CZAJA, W
[J]. PHYSIK DER KONDENSITERTEN MATERIE, 1971, 12 (03): : 226 - +
[7] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[8] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY
HEIM, U
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &
[9] EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP
HEIM, U
RODER, O
PILKUHN, MH
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (17) : 1173 - &
[10] LIFETIMES OF BOUND EXCITONS IN CDS
HENRY, CH
NASSAU, K
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1628 - &