EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP

被引：17

作者：

HEIM, U

RODER, O

PILKUHN, MH

机构：

[1] Physikalisches Institut, Universität Frankfurt/M.

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 17期

关键词：

D O I：

10.1016/0038-1098(69)90170-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The near edge photoluminescence of n-InP shows four emission lines at the lowest excitation level. The lines with lower energy gain in relative intensity as the excitation level increases. With further increase in excitation intensity, a new line emerges near 1.407 eV which shifts continuously to lower energy until stimulated emission occurs. © 1969.

引用

页码：1173 / &

共 15 条

[1] BASOV NG, 1966, SOV PHYS DOKL, V11, P522
[2] EXCITONS IN INP AT HIGH EXCITATION LEVELS
CASELLA, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2485 - &
[3] A CRITERION FOR EXCITON BINDING IN DENSE ELECTRON-HOLE SYSTEMS - APPLICATION TO LINE NARROWING OBSERVED IN GAAS
CASELLA, RC
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1703 - &
[4] ROOM TEMPERATURE SUPER-RADIANCE RADIATION IN N-TYPE GAAS BY CONTINUOUS ELECTRON-BEAM EXCITATION - (RADIATIVE RECOMBINATION TE-DOPED E)
CASEY, HC
KAISER, RH
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 113 - &
[5] ELISEEV PG, 1967, SOVIET PHYS JETP LET, V6, P15
[6] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[7] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY
HEIM, U
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &
[8] MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER
HOLONYAK, N
JOHNSON, MR
ROSSI, JA
GROVES, WO
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 151 - &
[9] RADIATIVE RECOMBINATION IN N-TYPE INP
LEITE, RCC
[J]. PHYSICAL REVIEW, 1967, 157 (03): : 672 - &
[10] NATHAN MI, 1965, 1964 S RAD REC SEM P, P205

← 1 2 →