EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP

被引：17

作者：

HEIM, U

RODER, O

PILKUHN, MH

机构：

[1] Physikalisches Institut, Universität Frankfurt/M.

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 17期

关键词：

D O I：

10.1016/0038-1098(69)90170-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The near edge photoluminescence of n-InP shows four emission lines at the lowest excitation level. The lines with lower energy gain in relative intensity as the excitation level increases. With further increase in excitation intensity, a new line emerges near 1.407 eV which shifts continuously to lower energy until stimulated emission occurs. © 1969.

引用

页码：1173 / &

共 15 条

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[12] RODER O, TO BE PUBLISHED
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ROSSI, JA
HOLONYAK, N
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BURD, JW
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (04) : 117 - &
[14] RADIATIVE RECOMBINATION FROM PHOTOEXCITED HOT CARRIERS IN GAAS
SHAH, J
LEITE, RCC
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (24) : 1304 - &
[15] TURNER WJ, 1964, PHYS REV A-GEN PHYS, V136, P1467

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