THE DIELECTRIC-CONSTANT MEASUREMENT OF CDIN2TE4

Electronic properties of various single crystals of CdIn2Te4 have been investigated, and more particularly the static dielectric constant epsilon-r. This material is usually known to have a very large dielectric constant, values as large as 200-265 are frequently claimed. Two methods were used to study epsilon-r. One is based on the direct measurement of the capacitance of a In/CdIn2Te4/In structure and a second one uses a Schottky diode. In this latter case, the epsilon-r value is deduced with the help of the Hall measurements. From our measurements the dielectric constant would be much smaller than 200-265, it is estimated to about 11. Finally our results are compared with those obtained by optical measurements.