RELAXATION PROCESSES OF RESONANCES IN SIH4 IN THE VICINITY OF THE SILICON 2P THRESHOLD

被引：62

作者：

DESOUZA, GGB

MORIN, P

NENNER, I

机构：

[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[2] CENS,DEPT PHYSICOCHIM,F-91191 GIF SUR YVETTE,FRANCE

来源：

PHYSICAL REVIEW A | 1986年 / 34卷 / 06期

关键词：

D O I：

10.1103/PhysRevA.34.4770

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：4770 / 4776

页数：7

共 39 条

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