LIQUID PHASE EPITAXIAL GROWTH OF GA1-XALXAS

The liquid phase epitaxy method of solution growth has been applied to the ternary compound semiconductor, Gai-xAlxAs, for nearly the complete solid composition range. Epitaxial deposition of this compound has been achieved on GaAs substrates. Factors which determine the metallurgical and chemical nature of the layers include: the geometry of the crystal growth apparatus, the design of the furnace and its temperature profile, the cooling schedule, the melt composition, and the residual oxygen concentration in the purging gas. © 1969, The Electrochemical Society, Inc. All rights reserved.