WAVE-PROPAGATION ON MESFET ELECTRODES AND ITS INFLUENCE ON TRANSISTOR GAIN

被引：77

作者：

HEINRICH, W

HARTNAGEL, HL

机构：

[1] Technische Hochschule Darmstadt, West Ger, Technische Hochschule Darmstadt, West Ger

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 01期

关键词：

ELECTRIC CONDUCTIVITY - ELECTRIC MEASUREMENTS - Gain - SEMICONDUCTOR DEVICES; FIELD EFFECT - Electrodes - TRANSISTORS - Analysis;

D O I：

10.1109/TMTT.1987.1133586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rigorous analysis of wave propagation along MESFET electrodes is presented. Both the losses caused by the channel and those caused by the finite electrode conductivity are included, together with small-signal amplification. Results from this wave analysis are used to determine overall gain. Conclusions concerning traveling-wave FET design, optimal gate width, and related criteria are drawn.

引用

页码：1 / 8

页数：8

共 15 条

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