PHASE-EQUILIBRIA AND LIQUID-PHASE EPITAXY GROWTH OF PBSNSETE LATTICE MATCHED TO PBSE

被引：19

作者：

MCCANN, PJ

FUCHS, J

FEIT, Z

FONSTAD, CG

机构：

[1] SPECTRA PHYS,DIV LASER ANALYT,BEDFORD,MA 01730

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[3] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2994 / 3000

页数：7

共 18 条

[1]

ALTMAN L, 1971, ELECTRONICS 1206, P64

[2]

[Anonymous], 1973, SOLID LIQUID INTERFA

[3] LIQUID-PHASE EPITAXIAL-GROWTH AND ASSESSMENT OF PB1-XSNXTE ALLOYS [J].

ASTLES, MG ;

YOUNG, ML .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :1-41

[4] LIQUID-PHASE EPITAXY OF GA1-XALXSB1-YASY/GASB AND THE EFFECT OF STRAIN ON PHASE-EQUILIBRIA [J].

BARANOV, AN ;

KONNIKOV, SG ;

POPOVA, TB ;

UMANSKY, VE ;

YAKOVLEV, YP .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (03) :547-552

[5] THE ROLE OF LATTICE STRAIN IN THE PHASE-EQUILIBRIA OF III-V TERNARY AND QUATERNARY SEMICONDUCTORS [J].

BHATTACHARYA, PK ;

SRINIVASA, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5090-5095

[6] TEMPERATURE-GRADIENT LPE GROWTH OF PB1-XSNXTE [J].

GROVES, SH .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) :195-206

[7] HORIZONTAL UNSEEDED VAPOR GROWTH OF IV-VI COMPOUNDS AND ALLOYS [J].

HARMAN, TC ;

MCVITTIE, JP .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :843-854

[8] PBSNSETE-PBSETE LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LASERS [J].

HORIKOSHI, Y ;

KAWASHIMA, M ;

SAITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :77-84

[9] LIQUID-PHASE EPITAXY OF PBTESE LATTICE-MATCHED TO PBSNTE [J].

KASEMSET, D ;

ROTTER, S ;

FONSTAD, CG .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) :863-878

[10]

KASEMSET D, 1970, INT ELECTRON DEVICES, P130

← 1 2 →