PBSNSETE-PBSETE LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LASERS

被引：22

作者：

HORIKOSHI, Y

KAWASHIMA, M

SAITO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.77

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：77 / 84

页数：8

共 36 条

[1]

ABRIKOSOV NK, 1969, SEMICONDUCTING 2 6 4, P137

[2] CHARACTERISTICS OF TUNABLE PB1-XSNX TE JUNCTION LASERS IN 8-12-MU-M REGION [J].

ANTCLIFFE, GA ;

PARKER, SG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4145-4160

[3]

Casey HC., 1978, HETEROSTRUCTURE LA B, P12, DOI 10.1016/B978-0-12-163102-4.50010-5

[4] PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J].

DONNELLY, JP ;

CALAWA, AR ;

FOYT, AG ;

LINDLEY, WT ;

HARMAN, TC .

SOLID-STATE ELECTRONICS, 1972, 15 (04) :403-&

[5]

GEIMAN KI, 1979, SOV PHYS SEMICOND+, V13, P520

[6]

GORBYLEV VA, 1972, SOV J QUANTUM ELECTR, V1, P505

[7] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].

GROVES, SH ;

NILL, KW ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :331-333

[8]

HARMAN TC, 1974, APPL SOLID STATE SCI, V0004, P00001

[9] PB-SN-TE PHASE-DIAGRAM AND ITS APPLICATION TO LIQUID-PHASE EPITAXIAL-GROWTH OF PB1-XSNXTE [J].

HARRIS, JS ;

LONGO, JT ;

GERTNER, ER ;

CLARKE, JE .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (03) :334-342

[10] NEW LIQUID-PHASE EPITAXIAL-GROWTH METHOD FOR GROWTH OF (ALGA)AS, GAAS MULTILAYERS [J].

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :887-888

← 1 2 3 4 →