COLLECTIVE INTERSUBBAND RESONANCES OF INVERSION ELECTRONS ON GAAS

被引：14

作者：

BATKE, E

WEIMANN, G

SCHLAPP, W

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-8046 GARCHING,FED REP GER

[2] FORSCHUNGSINST DEUTSCH BUNDESPOST,D-6100 DARMSTADT,FED REP GER

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.39.11171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11171 / 11174

页数：4

共 24 条

[1]

ABSTREITER G, 1984, TOP APPL PHYS, V54, P5

[2] BROADENING OF INTER-SUBBAND TRANSITIONS IN IMAGE-POTENTIAL-INDUCED SURFACE-STATES OUTSIDE LIQUID-HELIUM [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (03) :765-773

[3] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[4] PLASMON AND MAGNETOPLASMON EXCITATION IN TWO-DIMENSIONAL ELECTRON SPACE-CHARGE LAYERS ON GAAS [J].

BATKE, E ;

HEITMANN, D ;

TU, CW .

PHYSICAL REVIEW B, 1986, 34 (10) :6951-6960

[5]

BATKE E, 1983, PHYSICA B, V117, P670

[6] QUANTUM SIZE EFFECTS ON THE PLASMA DISPERSION IN QUASI-2-DIMENSIONAL ELECTRON-SYSTEMS [J].

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 29 (04) :2334-2336

[7] DETERMINATION OF SUBBAND STRUCTURE, DEPOLARIZATION SHIFT, AND DEPLETION CHARGE IN AN ALXGA1-XAS-GAAS HETEROSTRUCTURE [J].

ENSSLIN, K ;

HEITMANN, D ;

PLOOG, K .

PHYSICAL REVIEW B, 1989, 39 (15) :10879-10886

[8] THEORY OF SURFACE PLASMARONS .2. THE EFFECT OF A FINITE THICKNESS OF THE ACCUMULATION LAYER [J].

GERSTEN, JI .

SURFACE SCIENCE, 1980, 97 (01) :206-218

[9] RESONANT INTERACTION OF OPTICAL PHONONS WITH TWO-DIMENSIONAL ELECTRON AND HOLE SPACE-CHARGE LAYERS ON SILICON [J].

HEITMANN, D ;

BATKE, E ;

WIECK, AD .

PHYSICAL REVIEW B, 1985, 31 (10) :6865-6868

[10] GRATING-COUPLER-INDUCED INTERSUBBAND RESONANCES IN ELECTRON INVERSION-LAYERS OF SILICON [J].

HEITMANN, D ;

MACKENS, U .

PHYSICAL REVIEW B, 1986, 33 (12) :8269-8283

← 1 2 3 →