CHARACTERIZATION OF SURFACE-LAYERS PRODUCED BY ION-IMPLANTATION OF NITROGEN IN BULK ALUMINUM

被引：20

作者：

MCCUNE, RC

DONLON, WT

PLUMMER, HK

TOTH, L

KUNZ, FW

机构：

来源：

THIN SOLID FILMS | 1989年 / 168卷 / 02期

关键词：

D O I：

10.1016/0040-6090(89)90012-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / 280

页数：18

共 41 条

[1] THE DEPENDENCE OF ALUMINUM NITRIDE FILM CRYSTALLOGRAPHY ON SPUTTERING PLASMA COMPOSITION [J].

AITA, CR ;

GAWLAK, CJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (02) :403-406

[2]

AUCIELLO O, 1976, P INT C ION IMPLANTA, P231

[3]

AYLMORE DW, 1960, J I MET, V88, P204

[4] FORMATION OF CHEMICAL COMPOUNDS BY ION-BOMBARDMENT OF THIN TRANSITION-METAL FILMS [J].

BELII, IM ;

KOMAROV, FF ;

TISHKOV, VS ;

YANKOVSKII, VM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :343-352

[5] REACTIVE ION-BEAM DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS [J].

BHAT, S ;

ASHOK, S ;

FONASH, SJ ;

TONGSON, L .

JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (04) :405-418

[6]

BORGESEN P, 1982, IPP942 M PLANCK I PL

[7] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[8] PHASE-TRANSFORMATIONS AT BOMBARDMENT OF THIN-FILMS WITH IONS [J].

BYKOV, VN ;

TROYAN, VA ;

ZDOROVTSEVA, GG ;

KHAIMOVICH, VS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :53-61

[9]

Das S. K., 1976, ADV CHEM, V158, p112

[10]

DAVIS LE, 1976, HDB AUGER ELECTRON S

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