DONOR GROUND STATES OF GROUP-IV AND GROUP-III-V SEMICONDUCTORS

被引:19
作者
ALTARELL.M
IADONISI, G
机构
来源
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B | 1971年 / B 5卷 / 01期
关键词
D O I
10.1007/BF02737706
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:21 / &
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[1]  
AGGARWAL RL, 1965, PHYS REV, V140, P1246
[3]  
APPEL J, 1964, PHYS REV A, V133, P280
[4]   VALLEY-ORBIT INTERACTION IN SEMICONDUCTORS [J].
BALDERESCHI, A .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4673-+
[5]   BAND STRUCTURE AND IMPURITY STATES [J].
BASSANI, F ;
IADONISI, G ;
PREZIOSI, B .
PHYSICAL REVIEW, 1969, 186 (03) :735-&
[6]   ELECTROREFLECTANCE NEAR ANISOTROPIC INTERBAND-EDGES [J].
BOTTKA, N ;
ROESSLER, U .
SOLID STATE COMMUNICATIONS, 1967, 5 (12) :939-&
[7]  
Callaway J., 1964, ENERGY BAND THEORY
[8]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[10]   EFFECT OF PRESSURE ON ABSORPTION EDGES OF SOME III-V, II-VI, AND I-VII COMPOUNDS [J].
EDWARDS, AL ;
DRICKAMER, HG .
PHYSICAL REVIEW, 1961, 122 (04) :1149-&