EPITAXIAL-GROWTH OF PT ON BASAL-PLANE SAPPHIRE - A SEED FILM FOR ARTIFICIALLY LAYERED MAGNETIC METAL STRUCTURES

被引:81
作者
FARROW, RFC
HARP, GR
MARKS, RF
RABEDEAU, TA
TONEY, MF
WELLER, D
PARKIN, SSP
机构
[1] IBM Research Division, Almaden Research Center, San Jose, CA 95120-6099
关键词
D O I
10.1016/0022-0248(93)90102-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The epitaxial growth of Pt on basal-plane sapphire, i.e. sapphire (0001), by molecular beam epitaxy is described. Growth is monitored in situ using X-ray photoelectron diffraction (XPD), reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED). The structural perfection of thin (< 250 angstrom) films of Pt is studied using X-ray diffraction and electron microscopy. We find that Pt nucleates on the sapphire surface at 600-degrees-C as islands which are rotationally twinned about the Pt[111] axis. The epitaxial relationship is: Pt[111]\\Al2O3[0001] and Pt(110)\\Al2O3(1010BAR). Island coalescene occurs at a thickness of approximately 15 angstrom and X-ray diffraction shows that the Pt films have a high structural perfection. Such films are nearly ideal as seed films for a variety of epitaxial magnetic multilayers and alloys.
引用
收藏
页码:47 / 58
页数:12
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