ELECTRON-ENERGY DISTRIBUTIONS FROM GAP WITH NEGATIVE ELECTRON-AFFINITY .1. EMISSION PROPERTIES OF THERMALIZED ELECTRONS

被引：15

作者：

PIAGET, C

VANNIMENUS, J

SAGET, P

机构：

[1] LABS ELECTR & PHYS APPL, F-94450 BREVANNES, FRANCE

[2] ECOLE NORM SUPER, PHYS SOLIDES GRP, F-75231 PARIS 5, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 09期

关键词：

D O I：

10.1063/1.324262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3901 / 3906

页数：6

共 34 条

[1]

AFONINA LF, 1971, IZV AN SSSR FIZ+, V35, P1046

[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].

BARTELINK, D ;

MOLL, JL ;

MEYER, NI .

PHYSICAL REVIEW, 1963, 130 (03) :972-+

[3] SELECTION-RULES FOR NEGATIVE AFFINITY EMISSION [J].

BELL, RL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (09) :L118-L119

[4]

BELL RL, 1973, NEGATIVE ELECTRON AF

[5] EFFECT OF GAAS ELECTRONIC-STRUCTURE ON PERFORMANCE OF GAAS-(CS,O) PHOTOEMITTER [J].

BURT, MG ;

INKSON, JC .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :5-6

[6] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :43-53

[7] EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :L5-L7

[8]

BURT MG, COMMUNICATION

[9] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, J ;

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794

[10] ELECTRONIC-STRUCTURE OF ACTIVATING LAYER IN III-V - CS-O NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERS [J].

CLARK, MG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (05) :535-542

← 1 2 3 4 →