EFFECTS OF HYDROGEN INCORPORATION DURING DEPOSITION BY SPUTTERING FOR AMORPHOUS GALLIUM-PHOSPHIDE FILMS

被引:12
作者
MATSUMOTO, N
KUMABE, K
机构
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
关键词
D O I
10.1143/JJAP.18.1011
中图分类号
O59 [应用物理学];
学科分类号
摘要
[No abstract available]
引用
收藏
页码:1011 / 1012
页数:2
相关论文
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[2]   USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].
CONNELL, GAN ;
PAWLIK, JR .
PHYSICAL REVIEW B, 1976, 13 (02) :787-804
[3]  
KNIGHTS JC, 1978, J APPL PHYS, V49, P1291, DOI 10.1063/1.325024