NEW QUASIPARTICLE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GAP - REBUTTAL

[1] COLLINS TC, 1964, 1964 P INT C PHYS SE, P745

[2] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &

[3] A NEW QUASIPARTICLE BOND TO ISOELECTRONIC TRAP NITROGEN IN GAP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1159 - +

[4] CZAJA W, 1970, PRIVATE COMMUNICATIO

[5] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +

[6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &

[7] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (11) : 831 - &

[8] MERZ JL, 1969, PHYS REV, V188, P1288

[9] REYNOLDS DC, 1968, B AM PHYS SOC, V13, P405

[10] REYNOLDS DC, 1964, 1964 P INT C PHYS SE, P739

[1] COLLINS TC, 1964, 1964 P INT C PHYS SE, P745

[2] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &

[3] A NEW QUASIPARTICLE BOND TO ISOELECTRONIC TRAP NITROGEN IN GAP [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1159 - +

[4] CZAJA W, 1970, PRIVATE COMMUNICATIO

[5] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +

[6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &

[7] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (11) : 831 - &

[8] MERZ JL, 1969, PHYS REV, V188, P1288

[9] REYNOLDS DC, 1968, B AM PHYS SOC, V13, P405

[10] REYNOLDS DC, 1964, 1964 P INT C PHYS SE, P739