MEASUREMENT OF THE ANISOTROPY OF THE HOLE DISPERSION-CURVES IN AN ALAS/GAAS/ALAS QUANTUM-WELL GROWN ON A (311)A ORIENTATED SUBSTRATE

被引：3

作者：

HAYDEN, RK

HENINI, M

EAVES, L

MAUDE, DK

PORTAL, JC

CURY, LA

HILL, G

机构：

[1] CNRS, SERV NATL CHAMPS INTENSES, F-38042 GRENOBLE, FRANCE

[2] INST NATL SCI APPL, PHYS SOLIDES LAB, F-31077 TOULOUSE, FRANCE

[3] UNIV SHEFFIELD, DEPT ELECTR & ELECT ENGN, SHEFFIELD S1 3JD, S YORKSHIRE, ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 08期

关键词：

D O I：

10.1088/0268-1242/7/8/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous magnetic fields applied parallel to layer interfaces are used to examine the in-plane energy dispersion and anisotropy of the quantum well states of double barrier AlAs/GaAs resonant tunnelling diodes. The devices are grown on substrates with different orientations using molecular beam epitaxy. Measurements on a device grown on a (311)A substrate reveal the pronounced biaxial symmetry of the confined hole states in a quantum well of this orientation, including a marked saddle-shaped structure for one of the subbands. The spectra are compared with those of similar devices grown on a (100) surface.

引用

页码：1080 / 1084

页数：5

共 26 条

[1] CALCULATIONS OF HOLE SUBBANDS IN SEMICONDUCTOR QUANTUM WELLS AND SUPERLATTICES [J].