RECOVERY OF HOT-CARRIER DAMAGE IN REOXIDIZED NITRIDED OXIDE MOSFETS

被引：12

作者：

DOYLE, BS ^{[1
]}

DUNN, GJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 01期

关键词：

D O I：

10.1109/55.144944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recovery of channel hot-carrier damage in reoxidized nitrided oxide (RNO) n- and p-MOSFET's is examined. It is found that recovery is substantially greater in RNO versus conventional oxide (CO) devices, particularly for p-MOSFET's. We believe this recovery is due to the detrapping of electrons trapped in the nitridation-induced traps near the substrate interface. The more rapid recovery of the hot-carrier damage in RNO devices will produce greater circuit lifetime improvements over conventional oxides than predicted by accelerated static high-voltage tests.

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收藏

页码：38 / 40

页数：3

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