GROWTH-MECHANISM OF IN1-XGAXP AND IN1-XALXP IN METALORGANIC MOLECULAR-BEAM EPITAXY

被引：7

作者：

OZASA, K

YURI, M

TANAKA, S

MATSUNAMI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90375-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：171 / 175

页数：5

共 6 条

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[2] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KOBAYASHI, N ;

BENCHIMOL, JL ;

ALEXANDRE, F ;

GAO, Y .

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PRICE, SJW .

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SMITH, WL ;

WARTIK, T .

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[5] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS USING TRIMETHYL-GALLIUM AND TRIETHYL-GALLIUM SOURCES [J].

TOKUMITSU, E ;

KUDOU, Y ;

KONAGAI, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09) :1189-1192

[6] THE GROWTH OF GAAS, ALGAAS, INP AND INGAAS BY CHEMICAL BEAM EPITAXY USING GROUP-III AND GROUP-V ALKYLS [J].

TSANG, WT .

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