MAPPING OF GAAS AND SI WAFERS AND ION-IMPLANTED LAYERS BY LIGHT-INDUCED SCATTERING AND ABSORPTION OF IR LIGHT

被引：16

作者：

VAITKUS, J ^{[1
]}

GAUBAS, E ^{[1
]}

JARASIUNAS, K ^{[1
]}

PETRAUSKAS, M ^{[1
]}

机构：

[1] VILNIUS UNIV,MAT SCI LAB,VILNIUS 2432054,LITHUANIA,USSR

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 1A期

关键词：

D O I：

10.1088/0268-1242/7/1A/024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The methods of light-induced absorption and diffraction have been used to investigate the uniformity of Si and GaAs wafers and ion-implanted Si. Metastable annealing of defects, lifetime modification by swirl and radiation defects and anomalous depth penetration of ion-implantation-created defects have been demonstrated in Si. The mapping of GaAs wafers has been performed with picosecond and nanosecond light pulses and light absorption mechanisms are discussed.

引用

页码：A131 / A134

页数：4

共 12 条

[1]

AMSTIBOVSKIJ V, 1988, SOV PHYS COLLECTIONS

[2] TRANSIENT GRATINGS IN METROLOGY OF SEMICONDUCTOR PARAMETERS AND OPTOELECTRONIC DEVICES [J].

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 150 (02) :879-884

[3] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS [J].

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02) :793-800

[4]

JARASIUNAS K, 1988, ANN U MARIE CURIE SK, V43, P83

[5] STUDY OF CARRIER DYNAMICS AND RADIATION DEFECTS IN ION-IMPLANTED SILICON BY TRANSIENT GRATING TECHNIQUES [J].

JONIKAS, L ;

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 112 (01) :375-380

[6]

JORDAN AS, 1988, MRS BULL, V10, P36

[7]

KILIULIS R, 1991, IN PRESS PHYS STATUS, V127

[8]

Rissel H., 1980, ION IMPLANTATION

[9] STATUS OF DEVICE-QUALIFIED GAAS SUBSTRATE TECHNOLOGY FOR GAAS INTEGRATED-CIRCUITS [J].

THOMAS, RN ;

MCGUIGAN, S ;

ELDRIDGE, GW ;

BARRETT, DL .

PROCEEDINGS OF THE IEEE, 1988, 76 (07) :778-791

[10] THE DIFFRACTION OF LIGHT BY TRANSIENT GRATINGS IN CRYSTALLINE, ION-IMPLANTED, AND AMORPHOUS-SILICON [J].

VAITKUS, J ;

JARASIUNAS, K ;

GAUBAS, E ;

JONIKAS, L ;

PRANAITIS, R ;

SUBACIUS, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (08) :1298-1305

← 1 2 →