USE OF ION-IMPLANTATION TO ELIMINATE STRESS-INDUCED DISTORTION IN X-RAY MASKS

被引:13
作者
KU, YC [1 ]
SMITH, HI [1 ]
PLOTNIK, I [1 ]
机构
[1] HAMPSHIRE INSTRUMENTS INC,METROPOLITAN CORP CTR,MARLBOROUGH,MA 01752
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词
D O I
10.1116/1.584077
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2174 / 2177
页数:4
相关论文
共 7 条
[1]  
Betz H., 1986, Microelectronic Engineering, V5, P41, DOI 10.1016/0167-9317(86)90028-6
[2]  
Gosnet A. M., 1987, Microelectronic Engineering, V6, P253, DOI 10.1016/0167-9317(87)90046-3
[3]   REDUCTION IN X-RAY MASK DISTORTION USING AMORPHOUS WN-CHI ABSORBER STRESS COMPENSATED WITH ION-BOMBARDMENT [J].
KANAYAMA, T ;
SUGAWARA, M ;
ITOH, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :174-177
[4]   TUNGSTEN - AN ALTERNATIVE TO GOLD FOR X-RAY MASKS [J].
KARNEZOS, M ;
RUBY, R ;
HEFLINGER, B ;
NAKANO, H ;
JONES, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :283-287
[5]  
Luethje H., 1987, Microelectronic Engineering, V6, P259, DOI 10.1016/0167-9317(87)90047-5
[6]  
Plotnik I., 1986, Microelectronic Engineering, V5, P51, DOI 10.1016/0167-9317(86)90029-8
[7]  
YANOF AW, 1986, 1986 P SPIE SANT CLA, V632