GOLD SILICON INTERFACE MODIFICATION STUDIES

被引:41
作者
HALLEN, HD [1 ]
FERNANDEZ, A [1 ]
HUANG, T [1 ]
BUHRMAN, RA [1 ]
SILCOX, J [1 ]
机构
[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期
关键词
D O I
10.1116/1.585464
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed ballistic electron emission microscopy measurements on the Au-Si system with and without controlled monolayer impurities at the interface. At moderate sample to scanning tunneling microscopy tip biases (< 2.5 V) we have observed, and at high biases (> 3 V) modified the local ballistic transmittance (BT), i.e. the scaling factor of the collector current versus voltage spectra, of the interface. Spatially, the modification typically consists of a region of decreased BT a few hundred angstrom in diameter surrounded by a ring of increased BT. No change in Schottky barrier height is found. A model is presented which describes the decrease in terms of Au-Si interdiffusion, and the enhancement in terms of a thinning of an impurity layer between the Au and Si; connections are made to observations of the unstressed system.
引用
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页码:585 / 589
页数:5
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