ULTRAVIOLET-INDUCED ANNEALING OF HYDROGEN-BONDS IN SILICA FILMS DEPOSITED AT LOW-TEMPERATURES

被引：10

作者：

DEBAUCHE, C ^{[1
]}

LICOPPE, C ^{[1
]}

FLICSTEIN, J ^{[1
]}

DULAC, O ^{[1
]}

DEVINE, RAB ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si-H bonds. The photoreaction occurs at low temperatures (0-200-degrees-C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si-H bonds is ruled out.

引用

页码：306 / 308

页数：3

共 15 条

[1] ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].