NUCLEATION OF DIAMOND DURING HOT FILAMENT CHEMICAL VAPOR-DEPOSITION

被引:40
作者
SINGH, J [1 ]
VELLAIKAL, M [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
关键词
D O I
10.1063/1.353034
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the mechanism of nucleation of diamond during hot filament chemical vapor deposition process by high resolution transmission electron microscopy. Diamond was deposited on copper grids which were directly mounted on a high resolution transmission electron microscopy holder in order to study nucleation and growth characteristics of crystalline diamond. We have found direct evidence for the formation of a diamond-like amorphous carbon layer 8-14 nm thick in which small diamond microcrystallites about 2-5 nm across were embedded. These diamond microcrystallites were formed as a result of direct transformation of diamond-like carbon into diamond. Large diamond crystallites were observed to grow from these microcrystallites. It is envisaged that the diamond microcrystallites present in the amorphous diamond-like carbon layer provided nucleation sites for diamond growth on which the large diamond crystallites grew.
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页码:2831 / 2834
页数:4
相关论文
共 12 条
[1]  
ANTHONY TR, 1989, NATO ASI SERIES PHYS, P133
[2]   EFFICIENCY OF METHANE AND ACETYLENE IN FORMING DIAMOND BY MICROWAVE PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION [J].
JOHNSON, CE ;
WEIMER, WA ;
CERIO, FM .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (06) :1427-1431
[3]   THE MORPHOLOGY CHANGES IN DIAMOND SYNTHESIZED BY HOT-FILAMENT CHEMICAL VAPOR-DEPOSITION [J].
KIM, JS ;
KIM, MH ;
PARK, SS ;
LEE, JY .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (07) :3354-3357
[4]   REGROWTH OF RADIATION-DAMAGED LAYERS IN NATURAL DIAMOND [J].
LIU, B ;
SANDHU, GS ;
PARIKH, NR ;
SWANSON, ML ;
CHU, WK .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 45 (1-4) :420-423
[5]   A FLOW-TUBE STUDY OF DIAMOND FILM GROWTH - METHANE VERSUS ACETYLENE [J].
MARTIN, LR ;
HILL, MW .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1990, 9 (06) :621-623
[6]  
NEMANICH RJ, 1990, MRS P INT C NEW DIAM, P385
[7]   NUCLEATION AND GROWTH OF DIAMOND ON SI, CU, AND AU SUBSTRATES [J].
NIU, C ;
TSAGAROPOULOS, G ;
BAGLIO, J ;
DWIGHT, K ;
WOLD, A .
JOURNAL OF SOLID STATE CHEMISTRY, 1991, 91 (01) :47-56
[8]  
Nowick A. S., 1969, Comments on Solid State Physics, V2, P155
[9]   DIAMOND FILM PREPARATION BY ARC-DISCHARGE PLASMA-JET CHEMICAL VAPOR-DEPOSITION IN THE METHANE ATMOSPHERE [J].
OHTAKE, N ;
YOSHIKAWA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) :717-722
[10]   CHARACTERIZATION OF SEMICONDUCTING DIAMOND FILM AND ITS APPLICATION TO ELECTRONIC DEVICES [J].
OKANO, K ;
IWASAKI, T ;
KIYOTA, H ;
KUROSU, T ;
IIDA, M .
THIN SOLID FILMS, 1991, 206 (1-2) :183-187