FIELD-EMISSION SEM IMAGING OF COMPOSITIONAL AND DOPING LAYER SEMICONDUCTOR SUPERLATTICES

被引：171

作者：

PEROVIC, DD

CASTELL, MR

HOWIE, A

LAVOIE, C

TIEDJE, T

COLE, JSW

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

[2] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER,BC V6T 1Z1,CANADA

[3] NISSEI SANGYO CANADA INC,HITACHI SCI INSTRUMENTS,REXDALE,ON M9W 6A4,CANADA

来源：

ULTRAMICROSCOPY | 1995年 / 58卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1016/0304-3991(94)00183-N

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Field-emission scanning electron microscopy (FE-SEM) has been used to study several semiconductor multilayer heterostructures. Compositional superlattices based on GexSi1-x/Si and AlxGa1-xAs/GaAs have been studied in both cross-sectional and oblique plan-views after indentation. Secondary and backscattered electron images reveal strong atomic number contrast which is primarily structural in origin. Secondly, for the first time, heterostructures containing n and p doping have been directly imaged at low voltages (0.5-1 kV) including: (i) Si- and Be-doped GaAs layers and (ii) B- and As-doped Si layers. Secondary electron images reveal strong contrast at doping concentrations as low as 10(17) cm(-3). The results have been interpreted in terms of energy band-bending effects between n- and p-doped layers.

引用

页码：104 / 113

页数：10

共 23 条

[1] SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF ZNSEXTE1-XP-N JUNCTIONS
AVEN, M
BOLON, RB
LUDWIG, GW
DEVINE, JZ
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4136 - &
[2] ATOMIC AND ELECTRONIC Z-CONTRAST EFFECTS IN HIGH-RESOLUTION IMAGING
BLELOCH, AL
CASTELL, MR
HOWIE, A
WALSH, CA
[J]. ULTRAMICROSCOPY, 1994, 54 (2-4) : 107 - 115
[3] CASTELL MR, 1993, NATO ADV SCI INST SE, V233, P489
[4] CASTELL MR, 1993, PHIL MAG LETT, V6, P89
[5] CULLIS AG, 1993, MICROSCOPY SEMICONDU
[6] FARROW RC, 1991, J SCANNING MICROS S1, V13, P45
[7] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 923 - 929
[8] FRANCHI S, 1990, 12TH P INT C EL MICR, V1, P380
[9] HIGH-RESOLUTION SCANNING ELECTRON-MICROSCOPY
JOY, DC
PAWLEY, JB
[J]. ULTRAMICROSCOPY, 1992, 47 (1-3) : 80 - 100
[10] McMullan, 1990, P ROY MICROSC SOC, V25, P127

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