A POLYCIDE GATE ELECTRODE WITH A CONDUCTIVE DIFFUSION BARRIER FORMED WITH ECR NITROGEN PLASMA FOR DUAL-GATE CMOS

被引：9

作者：

HOSOYA, T

MACHIDA, K

IMAI, K

ARAI, E

机构：

[1] NTT LSI Laboratories, Kanagawa

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 12期

关键词：

D O I：

10.1109/16.477768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple diffusion barrier technology for polycide gate electrodes is presented, An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas and without substrate heating, The silicon nitride layer acts as an excellent barrier to impurity diffusion from polysilicon to silicide, It was found that barrier formation with ECR nitrogen plasma results in no fatal degradation in the MOS interface characteristics. This technology is very effective for making dual polycide gates inexpensively due to its simplicity and a good affinity with conventional ULSI fabrication processes.

引用

页码：2111 / 2116

页数：6

共 12 条

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