MEASUREMENT OF LATERAL DOPANT DIFFUSION IN THIN SILICIDE LAYERS

被引：23

作者：

CHU, CL ^{[1
]}

SARASWAT, KC ^{[1
]}

WONG, SS ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 10期

关键词：

D O I：

10.1109/16.158805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lateral diffusion of dopants in silicides has been studied using a new and sensitive Schottky-barrier test structure that relies on changes in the I-V characteristic of a silicide/polysilicon interface due to dopant diffusion from the doped silicide into the polysilicon. The process flow of the test structure makes the device readily adaptable to all deposited or reacted silicides. The test structure has been used to measure the diffusivity of B, As, and P in WSi2, TiSi2, and CoSi2 at temperatures from 750 to 1000-degrees-C. No measurable lateral diffusion of B in TiSi2 is observed. In all the other cases, diffusion is found to be several orders of magnitude higher than in silicon. These results should aid the development of process flows to prevent device degradation due to the lateral diffusion of dopants in the silicide layer.

引用

页码：2333 / 2340

页数：8

共 28 条

[1] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].