SILICIDED SHALLOW JUNCTION FORMATION BY ION-IMPLANTATION OF IMPURITY IONS INTO SILICIDE LAYERS AND SUBSEQUENT DRIVE-IN

被引：52

作者：

KWONG, DL

KU, YH

LEE, SK

LOUIS, E

ALVI, NS

CHU, P

机构：

[1] GM CORP, KOKOMO, IN 46902 USA

[2] CHARLES EVANS ASSOCIATES, REDWOOD CITY, CA 94063 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5084 / 5088

页数：5

共 13 条

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[3] SIMULTANEOUS FORMATION OF SILICIDE OHMIC CONTACTS AND SHALLOW P+-N JUNCTIONS BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J].

KWONG, DL ;

MEYERS, DC ;

ALVI, NS .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :244-246

[4] REFRACTORY-METAL SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J].

KWONG, DL ;

MEYERS, DC ;

ALVI, NS ;

LI, LW ;

NORBECK, E .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :688-691

[5]

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[6]

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[7]

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[8]

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[9]

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[10]

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