FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM

被引：38

作者：

DELFINO, M

BROADBENT, EK

MORGAN, AE

BURROW, BJ

NORCOTT, MH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 11期

关键词：

D O I：

10.1109/EDL.1985.26241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：591 / 593

页数：3

相关论文

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