BORON ION-IMPLANTATION IN SILICON THROUGH SELECTIVELY DEPOSITED TUNGSTEN FILMS

被引：6

作者：

DELFINO, M

DEBLASI, JM

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：338 / 340

页数：3

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[6] SHALLOW BORON JUNCTIONS IMPLANTED IN SILICON THROUGH A SURFACE OXIDE
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[8] INTERFACIAL STRUCTURE OF TUNGSTEN LAYERS FORMED BY SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 444 - 448