SHALLOW BORON JUNCTIONS IMPLANTED IN SILICON THROUGH A SURFACE OXIDE

[1] CHANNELING AND RANDOM EQUIVALENT DEPTH DISTRIBUTIONS OF 150 KEV LI, BE, AND B IMPLANTED IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3697 - 3701

[2] CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[3] FICHTNER W, 1982, IEEE ELECTRON DEVICE, V3, P34

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 223 - 229

[6] Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[8] MOLINE RA, 1971, 2ND P INT C ION IMPL

[9] SEIDEL TE, 1971, 2 P INT C ION IMPL S, P47

[10] CHANNELING OF 20-800-KEV ARSENIC IONS IN THE [110] AND THE [100] DIRECTIONS OF SILICON, AND THE ROLES OF ELECTRONIC AND NUCLEAR STOPPING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3985 - 3988

[1] CHANNELING AND RANDOM EQUIVALENT DEPTH DISTRIBUTIONS OF 150 KEV LI, BE, AND B IMPLANTED IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3697 - 3701

[2] CROWDER BL, 1973, ION IMPLANTATION SEM, P257

[3] FICHTNER W, 1982, IEEE ELECTRON DEVICE, V3, P34

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] DESCRIPTION OF ARSENIC AND BORON PROFILES IMPLANTED IN SIO2,SI3N4 AND SI USING PEARSON DISTRIBUTIONS WITH 4 MOMENTS [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 223 - 229

[6] Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62

[8] MOLINE RA, 1971, 2ND P INT C ION IMPL

[9] SEIDEL TE, 1971, 2 P INT C ION IMPL S, P47

[10] CHANNELING OF 20-800-KEV ARSENIC IONS IN THE [110] AND THE [100] DIRECTIONS OF SILICON, AND THE ROLES OF ELECTRONIC AND NUCLEAR STOPPING [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3985 - 3988