VARIATION OF MOBILITY WITH ELECTRIC FIELD IN NONDEGENERATE SEMICONDUCTORS

被引：14

作者：

SODHA, MS

机构：

来源：

PHYSICAL REVIEW | 1957年 / 107卷 / 05期

关键词：

D O I：

10.1103/PhysRev.107.1266

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1266 / 1271

页数：6

共 12 条

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[2] BROOKS H, 1951, PHYS REV, V83, P879
[3] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
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[4] MOBILITY IN HIGH ELECTRIC FIELDS
CONWELL, EM
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[5] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT
CONWELL, EM
[J]. PHYSICAL REVIEW, 1953, 90 (05): : 769 - 772
[6] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM
DEBYE, PP
CONWELL, EM
[J]. PHYSICAL REVIEW, 1954, 93 (04): : 693 - 706
[7] DINGLE, 1956, APPL SCI RES B, V6, P144
[8] DINGLE, 1956, APPL SCI RES B, V6, P155
[9] GUNN JB, 1957, PROGR SEMICONDUCTORS, V2
[10] IONIZED IMPURITY SCATTERING IN NONDEGENERATE SEMICONDUCTORS
SCLAR, N
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1548 - 1558