THE STRUCTURE AND ELECTROMIGRATION BEHAVIOR OF ALUMINUM FILMS DEPOSITED BY THE PARTIALLY IONIZED BEAM TECHNIQUE

被引：13

作者：

FIONOVA, LK

KONONENKO, OV

MATVEEV, VN

机构：

[1] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District

来源：

THIN SOLID FILMS | 1993年 / 227卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90186-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High purity aluminium films were deposited by the partially ionized beam technique. The structure of the films was investigated by transmission electron microscopy. The influences of the accelerating voltage and subsequent annealing on the average grain size, grain size distribution, texture and grain boundary morphology were studied. It was observed that the appearance of a large number of special grain boundaries in the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.

引用

页码：54 / 58

页数：5

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