ATOMIC LAYER EPITAXY OF GAAS WITH A 2-MU-M/H GROWTH-RATE

Atomic layer epitaxy (ALE) of GaAs with a growth rate as high as 2 mum/h was achieved in a specially designed reactor based on the rotating susceptor concept. High deposition rates are made possible by a unique partition system that permits rapid rotation of substrates between simultaneous streams of columns III and V reactant gases. Mixing of the gas streams at high rotational speeds is avoided by the gas shearing effect provided by the partition system. Background carbon levels in the GaAs films with high growth rates varied from mid 10(17) cm-3 at 650-degrees-C to mid 10(18) cm-3 at 550-degrees-C. When the growth rate was reduced to 0.3 mum/h, carbon background doping in the 10(15) cm-3 was achieved.