REACTION OF TRIMETHYLGALLIUM IN THE ATOMIC LAYER EPITAXY OF GAAS(100)

被引：80

作者：

YU, ML

MEMMERT, U

KUECH, TF

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.101719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1011 / 1013

页数：3

共 10 条

[1] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].

ASPNES, DE ;

COLAS, E ;

STUDNA, AA ;

BHAT, R ;

KOZA, MA ;

KERAMIDAS, VG .

PHYSICAL REVIEW LETTERS, 1988, 61 (24) :2782-2785

[2]

CLAVERIE K, 1989, APPL PHYS LETT, V54, P698

[3] ATOMIC LAYER EPITAXY FOR THE GROWTH OF HETEROSTRUCTURE DEVICES [J].

DENBAARS, SP ;

DAPKUS, PD ;

BEYLER, CA ;

HARIZ, A ;

DZURKO, KM .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :195-200

[4] EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

ISHII, H ;

OHNO, H ;

MATSUZAKI, K ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :132-135

[5] INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY [J].

KODAMA, K ;

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N .

APPLIED PHYSICS LETTERS, 1989, 54 (07) :656-657

[6]

LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[7] SURFACE-STRUCTURE OF AS-STABILIZED GAAS(001) - 2X4,C(2X8), AND DOMAIN-STRUCTURES [J].

LARSEN, PK ;

CHADI, DJ .

PHYSICAL REVIEW B, 1988, 37 (14) :8282-8288

[8] MECHANISM OF SURFACE-REACTION IN GAAS LAYER GROWTH [J].

NISHIZAWA, J ;

KURABAYASHI, T ;

ABE, H ;

NOZOE, A .

SURFACE SCIENCE, 1987, 185 (1-2) :249-268

[9] GROWTH KINETIC-STUDY IN GAAS MOLECULAR LAYER EPITAXY IN TMG/ASH3 SYSTEM [J].

NISHIZAWA, J ;

KURABAYASHI, T .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :98-107

[10] STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

PASHLEY, MD ;

HABERERN, KW ;

FRIDAY, W ;

WOODALL, JM ;

KIRCHNER, PD .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179

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