INGAPINGAASP/GAAS 0.808-MU-M SEPARATE-CONFINEMENT LASER-DIODES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：25

作者：

ELIASHEVICH, JD

ELIASHEVICH, I

MOBARHAN, K

KOLEV, E

WANG, LJ

GARBUZOV, DZ

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 02期

关键词：

D O I：

10.1109/68.275405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at lambda = 0.808 mum with a full width at half maximum less-than-or-equal-to 2 nm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/CM2 and differential efficiency of 0.7 W/A with series resistance of 0.12 OMEGA for 137 mm-long diodes have been measured.

引用

页码：132 / 134

页数：3

共 8 条

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