GA0-BULLET-8IN0-BULLET-2AS/GAAS/GA0-BULLET-51IN0-BULLET-49P BURIED RIDGE STRUCTURE SINGLE QUANTUM-WELL LASER EMITTING AT 0.98 MU-M

被引：7

作者：

MOBARHAN, K ^{[1
]}

RAZEGHI, M ^{[1
]}

BLONDEAU, R ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91404 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 16期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first fabrication is reported of a buried ridge structure Ga0.8In0.2As/GaAs/Ga0.51In0.49P laser emitting at 0.98-mu-m grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2-mu-m. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of eta = 60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm2.

引用

页码：1510 / 1511

页数：2

共 10 条

[1]

CHEN Y, 1991, APPL PHYS LETT, V59

[2] EFFICIENT PUMP WAVELENGTHS OF ERBIUM-DOPED FIBER OPTICAL AMPLIFIER [J].