HIGH-PURITY GAAS-LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

RAZEGHI, M

OMNES, F

NAGLE, J

DEFOUR, M

ACHER, O

BOVE, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1677 / 1679

页数：3

共 7 条

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APPLIED PHYSICS LETTERS, 1983, 43 (03) :282-284

[2] SHALLOW DONORS IN VERY PURE GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

CUNNINGHAM, JE ;

CHIU, TH ;

TIMP, G ;

AGYEKUM, E ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1285-1287

[3]

LOOK DC, 1983, PHYS REV B, V1151

[4]

RAZEGHI M, 1989, MOCVD CHALLENGE, V1

[5] POLARITON REFLECTANCE AND PHOTOLUMINESCENCE IN HIGH-PURITY GAAS [J].

SELL, DD ;

STOKOWSKI, SE ;

DINGLE, R ;

DILORENZO, JV .

PHYSICAL REVIEW B, 1973, 7 (10) :4568-4586

[6] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J].

STILLMAN, GE ;

WOLFE, CM .

THIN SOLID FILMS, 1976, 31 (1-2) :69-88

[7] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J].

WOLFE, CM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :564-567

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